NTS4409NT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTS4409NT1G
Datasheet:
Description:
MOSFETs SOT-323-3 SMD/SMT N-Channel number of channels:1 280 mW 25 V Continuous Drain Current (ID):700 mA 1.2 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 25 V |
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 249 MΩ |
| Height | 900 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 700 mA |
| Max Power Dissipation | 330 mW |
| Power Dissipation | 280 mW |
| Threshold Voltage | 650 mV |
| Number of Channels | 1 |
| Input capacitance | 60 pF |
| Continuous Drain Current (ID) | 700 mA |
| Rds On Max | 350 mΩ |
| Drain to Source Voltage (Vdss) | 25 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 23 ns |
| Element Configuration | Single |
| Fall Time | 8.2 ns |
| Rise Time | 8.2 ns |
| Gate Charge | 1.2 nC |
| Drain to Source Resistance | 350 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 650 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 3164
Distributors
pcbx
pcbxUnit Price$0.11328
Ext.Price$0.11328
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.11328 | $0.11328 |
| 10 | $0.10024 | $1.00240 |
| 50 | $0.08870 | $4.43500 |
| 100 | $0.07761 | $7.76100 |
| 500 | $0.06790 | $33.95000 |
| 1000 | $0.06438 | $64.38000 |
| 3000 | $0.06105 | $183.15000 |
| 5000 | $0.05733 | $286.65000 |